Halbleiterbauelement

Details

Veröffentlichungs-Nr.

EP3958325

Aktenzeichen

EP20191517

Anmeldetag

18. August 2020

Veröffentlichung

25. Juni 2025

Erteilung

25. Juni 2025

Rechtsraum

EP

IPC

H10D30/66H10D62/10

Abstract

A semiconductor device comprises a semiconductor body (100) comprising a first surface (101), a second surface (102) opposite to the first surface (101) in a vertical direction (y), an active region (220), and a sensor region (230) arranged adjacent to the active region (220) in a first horizontal direction (x). The semiconductor device further comprises a plurality of transistor cells (30₁, 30₂) at least partly integrated in the active region (220), each transistor cell (30₁, 30₂) comprising a source region (31), a body region (32), a drift region (35) separated from the source region (31) by the body region (32), and a gate electrode (33) dielectrically insulated from the body region (32). The semiconductor device further comprises at least one sensor cell (30_s) at least partly integrated in the sensor region (230), each of the at least one sensor cell (30_s) comprising a source region (31), a body region (32), a drift region (35) separated from the source region (31) by the body region (32), and a gate electrode (33) dielectrically insulated from the body region (32). The source regions (31) of the plurality of transistor cells (30₁, 30₂) are coupled to a first source electrode (411), and the source regions (31) of the at least one sensor cell (30_s) are coupled to a second source electrode (412) separate and distant from the first source electrode (411). At least one of the plurality of transistor cells (30₁, 30₂) directly adjoins one of the at least one sensor cells.

Anmelder

Firma

Infineon Technologies Austria AG

Land

🇦🇹 Österreich

Fachgebiete