Magnetoresistives Element für einen 2D-Magnetsensor mit Reduzierter Hysterese-Antwort

Details

Veröffentlichungs-Nr.

EP3971598

Aktenzeichen

EP20315414

Anmeldetag

18. September 2020

Veröffentlichung

3. September 2025

Erteilung

3. September 2025

Rechtsraum

EP

IPC

G01R33/09H01F10/32// G01R33/00

Abstract

A magnetoresistive element (10) for a 2D magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) included between a reference layer (21) having a reference magnetization (210) and a sense layer (23) having a sense magnetization (230). The sense layer (23) comprises a sense synthetic antiferromagnetic (SAF) structure including a first sense sublayer (231) in contact with the tunnel barrier layer (22) and separated from a second sense sublayer (232) by a first nonmagnetic spacer layer (233) such that the first sense sublayer (231) is antiferromagnetically coupled to the second sense sublayer (232). The sense layer (23) is configured such that a sense magnetic ratio (ΔM) defined as: ΔM=MsFM2tFM2−MsFM1tFM1MsFM2tFM2+MsFM1tFM1 wherein M_SFM1 and M_SFM2 are the spontaneous magnetizations of the first and second sense sublayers (231, 232) and t_FM1 and t_FM2 are the thicknesses of the first and second sense sublayers (231, 232); and wherein the sense magnetic ratio is between 0.1 and 0.25.

Anmelder

Firmen

Allegro MicroSystems, LLC
Crocus Technology SA
Crocus Technology S.A.

Land

🇺🇸 USA

Fachgebiete