Dynamisch Dotierter Feldeffekttransistor und Verfahren zu Seiner Steuerung

Details

Veröffentlichungs-Nr.

EP3982420

Aktenzeichen

EP20200764

Anmeldetag

8. Oktober 2020

Veröffentlichung

13. April 2022

Rechtsraum

EP

IPC

H01L29/786H01L29/423H01L29/417

Abstract

According to an aspect of the present inventive concept there is provided a field-effect transistor and a method for controlling such. The transistor comprises: a semiconductor layer (20); a source terminal (33), a drain terminal (36) and a single gate (40).The source and drain terminals (33, 36) are arranged on a first side (21) of the semiconductor layer (20) and the gate (40) is arranged on a second side (22) of the semiconductor layer (20) opposite the first side (21).The gate (40) and the source terminal (33) are arranged to overlap with a first common region (24) of the semiconductor layer (20) and the gate (40) and the drain terminal (36) are arranged to overlap with a second common region (27) of the semiconductor layer (20).The semiconductor layer (20) further comprises a first gap region (25) and a second gap region (28) which the gate (40) does not overlap.The gate (40) is configured to induce an electrostatic doping of the first and second common regions (24, 27) and induce a channel in a channel region (29) of the semiconductor layer (20), extending between the first and second common regions (24, 27).

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien

Fachgebiete