Mos-Transistor, der vom Substrat eines Integrierten Schaltkreises Isoliert Ist, und Anwendung zur Erkennung der Öffnung eines Geschlossenen Behälters

Details

Veröffentlichungs-Nr.

EP3985727

Aktenzeichen

EP21201130

Anmeldetag

6. Oktober 2021

Veröffentlichung

19. März 2025

Erteilung

19. März 2025

Rechtsraum

EP

IPC

H01L27/12H01L29/66H01L29/786

Abstract

The integrated circuit comprises - a first substrate (SB1) and - at least one first MOS transistor (TRP) having a first polysilicon region (P1) electrically isolated from the first substrate and including a gate region (RG), a second polysilicon region (P2) electrically isolated from the first polysilicon region (P1) and from the first substrate (SB1) and including a source region (RS), a substrate region (RSB) and a drain region (RD) of said first transistor, the first polysilicon region (P1) being located between a zone (Z) of the first substrate (SB1) and the second polysilicon region (P2).

Anmelder

Firma

STMicroelectronics (Rousset) SAS

Land

🇫🇷 Frankreich

Fachgebiete