Halbleiterbauelement

Details

Veröffentlichungs-Nr.

EP3989228

Aktenzeichen

EP21203908

Anmeldetag

21. Oktober 2021

Veröffentlichung

11. September 2024

Erteilung

11. September 2024

Rechtsraum

EP

IPC

G11C7/06G11C11/4074G11C11/4091

Abstract

A semiconductor device includes a memory mat having: a plurality of memory cells; a sense amplifier connected to a memory cell selected from the plurality of memory cells; a first power supply wiring; a first switch connected between the sense amplifier and the first power supply wiring and made an ON state in operating the sense amplifier; and a second switch connected to the sense amplifier and made an ON state in operating the sense amplifier, a second power supply wiring arranged outside the memory mat and connected to the first power supply wiring, a third power supply wiring arranged outside the memory mat and connected to the sense amplifier via the second switch, and a short switch arranged outside the memory mat and connected between the second and third power supply wirings. Here, in operating the sense amplifier, the short switch is made an ON state.

Anmelder

Firma

Renesas Electronics Corporation

Land

🇯🇵 Japan

Fachgebiete