Magnetoresistives Sensorelement mit Breitem Linearen Ansprechverhalten und Robuster Nominaler Leistung und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP3992655

Aktenzeichen

EP20315443

Anmeldetag

3. November 2020

Veröffentlichung

4. Mai 2022

Rechtsraum

EP

IPC

H01F10/32H01F41/30

Abstract

The present disclosure concerns a magnetoresistive element (10) for a magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) included between a reference layer (21) having a fixed reference magnetization (210) and a sense layer (23) having a free sense magnetization (230), wherein the sense magnetization (230) comprises a stable vortex configuration. The magnetoresistive element (10) further comprises a reference pinning layer (24) in contact with the reference layer (21) and pining the reference magnetization (210) by exchange-bias at a first blocking temperature (Tb1). The magnetoresistive element (10) further comprises a sense pinning layer (25) in contact with the sense layer (23) and pining the sense magnetization (230) by exchange-bias at a second blocking temperature (Tb2) lower that the first blocking temperature (Tb1). The present disclosure concerns a method for manufacturing the magnetoresistive element.

Anmelder

Firmen

Allegro MicroSystems, LLC
Crocus Technology SA
Crocus Technology S.A.

Land

🇺🇸 USA

Fachgebiete