Vorrichtung und Verfahren zur Luftleckdetektion und Verfahren zur Elektroplattierung von Wafern

Details

Veröffentlichungs-Nr.

EP3998374

Aktenzeichen

EP21783382

Anmeldetag

11. Juni 2021

Veröffentlichung

18. Mai 2022

Rechtsraum

EP

IPC

C25D7/12H01L21/00C25D17/00C25D21/12G01M3/26

Abstract

A leak detection apparatus and method and a wafer electroplating method are provided. An air tightness state of a reaction chamber in a wafer electroplating device is detected in advance before a wafer electroplating process is performed, namely whether leak occurs at the reaction chamber is judged by inputting a detection gas to the reaction chamber and detecting a gas pressure value of the detection gas, and whether to perform the wafer electroplating process is determined according to a judgment result, so that the problems such as pollution to the wafer and/or damage to the horizontal electroplating device caused by leakage of the electroplating solution during the wafer electroplating process may be solved.

Anmelder

Firma

Changxin Memory Technologies, Inc.

Land

🇨🇳 China

Fachgebiete