Herstellungsverfahren für Halbleiterstruktur und Halbleiterstruktur

Details

Veröffentlichungs-Nr.

EP3998626

Aktenzeichen

EP21773280

Anmeldetag

15. Juni 2021

Veröffentlichung

31. Januar 2024

Erteilung

31. Januar 2024

Rechtsraum

EP

IPC

H01L21/762H01L21/3205H01L21/321

Abstract

The present disclosure relates to the technical field of semiconductors, and provides a method for manufacturing a semiconductor structure and a semiconductor structure. The method for manufacturing a semiconductor structure includes: a substrate is provided, an isolation trench being formed on the substrate; a silicon-rich isolation layer is formed in the isolation trench, the silicon-rich isolation layer covering an inner surface of the isolation trench; and an isolation oxide layer is formed in the isolation trench. The isolation oxide layer fills up the isolation trench. The formation of the silicon-rich isolation layer can ensure the size of the active region, increase the depth of the isolation trench, thereby enhancing the isolation effect, and improving the performance of the semiconductor structure.

Anmelder

Firma

Changxin Memory Technologies, Inc.

Land

🇨🇳 China

Fachgebiete