Lötpadstruktur, Halbleiterstruktur, Halbleiterverpackungsstruktur und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP3998628

Aktenzeichen

EP21773276

Anmeldetag

15. Juni 2021

Veröffentlichung

18. Mai 2022

Rechtsraum

EP

IPC

H01L23/488H01L21/60H01L23/00H01L25/065H01L25/00

Abstract

Provided are a bonding pad structure, a semiconductor structure, a semiconductor package structure and a method for preparing the same, which relate to the technical field of semiconductor package and are configured to solve the technical problem that separation easily occurred between adjacent semiconductors during bonding due to thermal expansion, and accordingly package quality of a semiconductor device is affected. For the bonding pad structure, the semiconductor structure and the semiconductor package structure provided by the examples, an expansion stagnating block (20) subjected to high-temperature tempering treatment is partially wrapped inside a bonding pad layer (10), the expansion stagnating block 20 subjected to the high-temperature tempering will not subjected to expansion or will have a small expansion during bonding of two semiconductor units. Moreover, the expansion stagnating block 20 extends into the bonding pad layer (10) and can reduce part of a volume of the bonding pad layer (10), in this way an expansion volume of the bonding pad layer (10) is reduced during bonding, and accordingly drive force driving two adjacent semiconductor units to separate is reduced, thereby avoiding the separation between the two adjacent semiconductor units during bonding.

Anmelder

Firma

Changxin Memory Technologies, Inc.

Land

🇨🇳 China

Fachgebiete