Leistungshalbleiterbauelement

Details

Veröffentlichungs-Nr.

EP4006968

Aktenzeichen

EP20210025

Anmeldetag

26. November 2020

Veröffentlichung

22. März 2023

Erteilung

22. März 2023

Rechtsraum

EP

IPC

H01L23/473

Abstract

A power semiconductor component (1) is specified, with at least two power semiconductor modules (2), each being connected to a cooling structure (4), and a cooling chamber (3) having an inlet port (11) and an outlet port (12), wherein the cooling chamber (3) is adapted for a flow direction of a coolant substance within the cooling chamber (3) from the inlet port (11) to the outlet port (12), each of the at least two cooling structures (4) are provided within the cooling chamber (3) consecutively in direction of the flow direction such that each of the at least two cooling structures (4) forms a flow resistance region (14) in the cooling chamber (3), the cooling chamber (3) comprises at least one bypass region (17), the at least one bypass region (17) is connected in parallel to at least one of the at least two flow resistance regions (14) being closer to the inlet port (11), and the cooling chamber (3) is adapted for a flow rate of the at least one flow resistance region (14), which is connected in parallel to the at least one bypass region (17), closer to the inlet port (11) being smaller than a flow rate of one of the at least two flow resistance regions (14) closer to the outlet port (12).

Anmelder

Firmen

Hitachi Energy Ltd
Hitachi Energy Switzerland AG

Land

🇨🇭 Schweiz

Fachgebiete