Bidirektionale Thyristorvorrichtung

Details

Veröffentlichungs-Nr.

EP4006988

Aktenzeichen

EP20209815

Anmeldetag

25. November 2020

Veröffentlichung

3. Januar 2024

Erteilung

3. Januar 2024

Rechtsraum

EP

IPC

H01L29/06H01L29/08H01L29/423H01L29/747H01L29/74

Abstract

A bidirectional thyristor device (1) comprising a semiconductor body (2) extending between a first main surface (21) and a second main surface (22), is provided wherein a first main electrode (31) and a first gate electrode (41) are arranged on the first main surface and a second main electrode (32) and a second gate electrode (42) are arranged on the second main surface. The first main electrode comprises a plurality of first segments (310) that are spaced apart from one another, wherein at least some of the first segments are completely surrounded by the first gate electrode in a view onto the first main surface. The second main electrode comprises a plurality of second segments (320) that are spaced apart from one another, wherein at least some of the second segments are completely surrounded by the second gate electrode in a view onto the second main surface. The gate may have a honeycomb (hexagon) pattern. The bidirectional thyristor device (1) further comprises first, second and third base regions (51, 52, 53), as well as emitter regions (61, 62) on either side of the base regions. The emitter regions (61, 62) comprise emitter short regions (71, 72) of the opposite conductivity type.

Anmelder

Firmen

Hitachi Energy Ltd
Hitachi Energy Switzerland AG

Land

🇨🇭 Schweiz

Fachgebiete