Halbleiterbauelement mit einer Seitenfläche mit Unterschiedlichen Teilbereichen

Details

Veröffentlichungs-Nr.

EP4006990

Aktenzeichen

EP20210372

Anmeldetag

27. November 2020

Veröffentlichung

5. April 2023

Erteilung

5. April 2023

Rechtsraum

EP

IPC

H01L29/74H01L29/06

Abstract

A semiconductor device (1) with a semiconductor body (2) is specified, the semiconductor body extending in a vertical direction between a first main surface (21) and a second main surface (22) opposite the first main surface. The semiconductor body comprises a first semiconductor layer (31) of a first conductivity type and a second semiconductor layer (32) of a second conductivity type different from the first conductivity type thereby forming a first pn junction (41), wherein the first semiconductor layer (31) is more heavily doped than the second semiconductor layer (32). A side surface (5) of the semiconductor body (2) extending between the first main surface (21) and the second main surface (22) delimits the semiconductor body (2) in a lateral direction comprises a first partial region (51) and a second partial region (52), wherein the first partial region (51) and the second partial region (52) delimit the first semiconductor layer (31) in regions. The first partial region (51) delimits the first pn junction (41) in the lateral direction and the second partial region (52) is spaced apart from the first pn junction (41) in the vertical direction. The first partial region (51) is arranged at a first angle (α) and the second partial region (52) is arranged at a second angle (β) with respect to the first pn junction (41) wherein the first angle (α) is larger than the second angle (β).

Anmelder

Firmen

Hitachi Energy Ltd
Hitachi Energy Switzerland AG

Land

🇨🇭 Schweiz

Fachgebiete