Leistungshalbleierbauteils mit einer Isolierten Graben-Gateelektrode

Details

Veröffentlichungs-Nr.

EP4009379

Aktenzeichen

EP20211584

Anmeldetag

3. Dezember 2020

Veröffentlichung

11. Juni 2025

Erteilung

11. Juni 2025

Rechtsraum

EP

IPC

H10D30/66H10D12/00H10D62/17H10D64/27H10D62/10

Abstract

A power semiconductor device (1) comprising a semiconductor body (2) extending in a vertical direction between a first main surface (21) and a second main surface (22), a trench (4) extending from the first main surface (21) into the semiconductor body (2) in the vertical direction, and an insulated trench gate electrode (3) that is formed on the first main surface (21) and extends into the trench (4) is specified, wherein the trench (4) comprises along a main horizontal extension direction of the trench (4) a plurality of alternating deeper segments (41) and the insulated trench gate electrode (3) continuously extends over the plurality of segments (41).

Anmelder

Firmen

Hitachi Energy Ltd
Hitachi Energy Switzerland AG

Land

🇨🇭 Schweiz

Fachgebiete