Speicherzelle, Vorrichtung und Verfahren zum Schreiben in eine Speicherzelle

Details

Veröffentlichungs-Nr.

EP4012710

Aktenzeichen

EP20213426

Anmeldetag

11. Dezember 2020

Veröffentlichung

23. Juli 2025

Erteilung

23. Juli 2025

Rechtsraum

EP

IPC

G11C11/16G11C11/18G11C11/56

Abstract

According to an aspect there is provided a memory cell (10, 50). The memory cell (10, 50) comprises: a first (21, 61) and a second (22, 62) electrode; a spin-orbit-torque, SOT, layer (30, 70) comprising a first (31, 71) and a second (32, 72) electrode contact portion arranged in contact with the first (21, 61) and the second (22, 62) electrode, respectively, and an intermediate portion (33, 73) between the first and second electrode contact portions (31, 32, 71, 72); a first magnetic tunnel junction, MTJ, layer stack (41, 81) arranged in contact with the intermediate portion (33, 73); and a second MTJ layer stack (42, 82) arranged in contact with the first or second electrode contact portion (32, 72). A memory device (90) comprising such a memory cell (10, 50) and a method (100) for writing to such a memory cell (10, 50) are also provided.

Anmelder

Firmen

Imec VZW
Katholieke Universiteit Leuven KU Leuven Research & Development

Land

🇧🇪 Belgien

Fachgebiete