Leistungshalbleitermodul, Leistungshalbleiteranordnung und Verfahren zur Herstellung eines Leistungshalbleitermoduls

Details

Veröffentlichungs-Nr.

EP4012759

Aktenzeichen

EP20213165

Anmeldetag

10. Dezember 2020

Veröffentlichung

3. Januar 2024

Erteilung

3. Januar 2024

Rechtsraum

EP

IPC

H01L23/00H01L23/049H01L23/16H01L25/07

Abstract

Power semiconductor module, power semiconductor assembly and method for producing a power semiconductor moduleA power semiconductor module (1) is specified comprising- at least one submodule (2) including- at least one power semiconductor device (3) being connected to at least one press pin (4) and at least one gate pin (5), and- a housing (6) surrounding the at least one power semiconductor device (3), the at least one press pin (4) and the at least one gate pin (5) in lateral directions, and- a module frame (7) surrounding the at least one submodule (2) in lateral directions, wherein- an elastic element (8) is arranged between the module frame (7) and the housing (6).Further, a power semiconductor assembly and a method for producing a power semiconductor module is specified.

Anmelder

Firmen

Hitachi Energy Ltd
Hitachi Energy Switzerland AG

Land

🇨🇭 Schweiz

Fachgebiete