Siliciumcarbid-Leistungsvorrichtung und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP4016645

Aktenzeichen

EP20216084

Anmeldetag

21. Dezember 2020

Veröffentlichung

13. August 2025

Erteilung

13. August 2025

Rechtsraum

EP

IPC

H10D12/01H10D30/66H10D62/10H10D62/832

Abstract

A silicon carbide power device (100) having a low on-resistance R_on and a method for manufacturing the same are provided. The silicon carbide power device (100) comprises a first conductivity-type substrate (20), a plurality of silicon carbide layer stacks (30), a continuous insulating layer (40) and a gate electrode layer (45). Each silicon carbide layer stack (30) comprises the following layers stacked on the substrate (20): a first conductivity-type drain layer (35), a second conductivity-type channel layer (37) and a first conductivity-type source layer (36). A plurality of first insulating layer portions (42) laterally cover and surround at least the drain layer (35) and the channel layer (37) of each silicon carbide layer stack (30). Each point of each channel layer (37) is laterally sandwiched between two opposing portions of the gate electrode layer (45), wherein the two opposing portions have a distance (d) of less than 2 µm along a straight line extending through that point of that channel layer (37).

Anmelder

Firmen

Hitachi Energy Ltd
Hitachi Energy Switzerland AG

Land

🇨🇭 Schweiz

Fachgebiete