Leistungshalbleitermodul, Verfahren zur Herstellung davon und Elektrischer Wandler

Details

Veröffentlichungs-Nr.

EP4020531

Aktenzeichen

EP20216589

Anmeldetag

22. Dezember 2020

Veröffentlichung

10. April 2024

Erteilung

10. April 2024

Rechtsraum

EP

IPC

H01L21/60H01L21/66H01L23/538H01L23/495H01L25/07

Abstract

The disclosure relates to a method for manufacturing a power semiconductor module (34), wherein the power semiconductor module (34) comprises a plurality of power semiconductor devices (10), said method comprising the steps of: a) providing at least one substrate (12) for carrying the plurality of power semiconductor devices (10); and b) placing the plurality of power semiconductor devices (10) on the at least one substrate (12); wherein the method further comprises manufacturing steps as follows: c) measuring, if one or more power semiconductor devices (10) of the plurality of the power semiconductor devices (10) are damaged; d) electrically interconnecting at least a part of the power semiconductor devices (10) comprising at least two power semiconductor devices (10) in a parallel configuration; wherein after the steps c) and d) are realized and in case of one or more power semiconductor devices (10) being a damaged power semiconductor device (10a) the one or more damaged power semiconductor devices (10a) are electrically separated from the non-damaged power semiconductor devices (10b, 10c); and wherein, after the steps c) and d) are realized, at least two of the electrically interconnected power semiconductor devices (10) in the parallel configuration are non-damaged power semiconductor devices (10b, 10c).

Anmelder

Firmen

Hitachi Energy Ltd
Hitachi Energy Switzerland AG

Land

🇨🇭 Schweiz

Fachgebiete