Verfahren zur Herstellung eines Halbleiterbauelements

Details

Veröffentlichungs-Nr.

EP4064352

Aktenzeichen

EP22163912

Anmeldetag

23. März 2022

Veröffentlichung

9. November 2022

Rechtsraum

EP

IPC

H01L21/78// H01L27/146

Abstract

A method for manufacturing a semiconductor device includes providing a wafer that includes a device region and a peripheral region of the device region, the device region including multiple chip regions. The method includes removing a portion of the peripheral region such that the removed portion has an annular shape. The method includes forming a protective layer on a first surface of the wafer. The method includes grinding a second surface of the wafer in which the protective layer is formed on the first surface.

Anmelder

Firma

MITSUMI ELECTRIC CO., LTD.

Land

🇯🇵 Japan

Fachgebiete