Verfahren zur Formung eines Ohmschen Kontakts auf einem Halbleiterbauelement mit Breiter Bandlücke und Halbleiterbauelement mit Breiter Bandlücke

Details

Veröffentlichungs-Nr.

EP4071786

Aktenzeichen

EP21166967

Anmeldetag

6. April 2021

Veröffentlichung

5. November 2025

Erteilung

5. November 2025

Rechtsraum

EP

IPC

H01L21/28H01L21/265H10D30/66H10D30/01H10D64/62H10D30/63H10D62/834H10D64/27// H10D62/832

Abstract

The present disclosure relates to a method for forming an ohmic contact on a wide-bandgap semiconductor device comprising: shallow implanting a dopant through a first surface (4) of a wide-bandgap semiconductor device (1) using an implantation energy of less than 15 keV to form at least one interface region (5) of a wide-bandgap semiconductor material (2), thermal treatment of the interface region (5) comprising the implanted dopant at a temperature below 1100°C, and depositing a metal material on top of the at least one interface region (5) to form at least one ohmic contact region (3). The present disclosure further relates to a wide-bandgap semiconductor device (1) comprising a semiconductor body or epitaxial layer comprising a wide-bandgap semiconductor material (2), at least one interface region (5) which is doped and arranged within the wide-bandgap semiconductor material (2), and at least one ohmic contact region (3) arranged on top of the at least one interface region (5).

Anmelder

Firmen

Hitachi Energy Ltd
Hitachi Energy Switzerland AG

Land

🇨🇭 Schweiz

Fachgebiete