Bondpads für Halbleiterchips und Zugehörige Verfahren und Systeme
Anmelder: Micron Technology, Inc. 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP4135020
- Aktenzeichen
- EP22189871
- Anmeldetag
- 11. August 2022
- Veröffentlichung
- 26. Juli 2023
- Rechtsraum
- EP
- IPC
- H01L23/00
Abstract
Bond pads for semiconductor die assemblies, and associated methods and systems are disclosed. In one embodiment, a semiconductor die assembly includes a first semiconductor die including a first bond pad on a first side of the first semiconductor die. The semiconductor die assembly further includes a second semiconductor die including a second bond pad on a second side of the second semiconductor die. The first bond pad is aligned and bonded to the second bond pad at a bonding interface between the first and second bond pads, and at least one of the first and second bond pads include a first metal and a second metal different than the first metal. Further, the first metal is located at the bonding interface and the second metal has a first thickness corresponding to at least onefourth of a second thickness of the first or second bond pad.
Anmelder
- Firma
- Micron Technology, Inc.
- Land
- 🇺🇸 USA
US-amerikanisches Halbleiterunternehmen mit Sitz in Boise, Idaho. Micron entwickelt und fertigt Speicherchips wie DRAM und NAND-Flash sowie Speicherlösungen für Computer, Mobilgeräte, Rechenzentren und Automobile.
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