Material zur Bildung eines Füllfilms zur Verhinderung des Kollabierens einer Halbleitersubstratstruktur und Verfahren zur Behandlung eines Halbleitersubstrats

Details

Veröffentlichungs-Nr.

EP4177932

Aktenzeichen

EP22203226

Anmeldetag

24. Oktober 2022

Veröffentlichung

23. April 2025

Erteilung

23. April 2025

Rechtsraum

EP

IPC

H01L21/02

Abstract

A material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains: (A) a polymer having a structural unit shown by the following general formula (1); (B) a residual-solvent removal promoter containing a compound shown by the following general formula (2); and (C) an organic solvent. A ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00. The residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A). The material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains no acid generator. This provides: a material for forming a filling film for inhibiting semiconductor substrate pattern collapse, the resulting filling film being capable of filling a fine structure pattern having high aspect ratio without causing voids; and a method for treating a semiconductor substrate to successfully inhibit semiconductor substrate pattern collapse.

Anmelder

Firma

SHIN-ETSU CHEMICAL CO., LTD.

Land

🇯🇵 Japan

Fachgebiete