Bipolartransistorstruktur auf einer Halbleiterlamelle und Verfahren zu Ihrer Herstellung

Details

Veröffentlichungs-Nr.

EP4210110

Aktenzeichen

EP22206418

Anmeldetag

9. November 2022

Veröffentlichung

11. März 2026

Erteilung

11. März 2026

Rechtsraum

EP

IPC

H10D10/01H10D10/00H10D62/10H10D84/03H10D84/40H10D84/01

Abstract

A bipolar transistor structure comprising a semiconductor fin on a substrate, the semiconductor fin having a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction; a first emitter/collector material adjacent a first sidewall of the semiconductor fin along the width of the semiconductor fin, the first emitter/collector material having a second doping type opposite the first doping type; and a second emitter/collector material adjacent a second sidewall of the semiconductor fin along the width of the semiconductor fin, the second emitter/collector material having the second doping type, wherein a width of the first emitter/collector material is different from a width of the second emitter/collector material.

Anmelder

Firma

GlobalFoundries U.S. Inc.

Land

🇺🇸 USA

Fachgebiete