Transistor, Leistungselektronische Schaltvorrichtung und Verfahren zur Herstellung eines Transistors

Details

Veröffentlichungs-Nr.

EP4231358

Aktenzeichen

EP22157298

Anmeldetag

17. Februar 2022

Veröffentlichung

22. Mai 2024

Erteilung

22. Mai 2024

Rechtsraum

EP

IPC

H01L29/08H01L29/16H01L29/167H01L29/78H01L21/336// H01L29/24

Abstract

The present invention relates to a transistor (10), in particular a wide bandgap semiconductor power transistor (40), comprising an epitaxial layer (11) of a first conductivity type, at least one well region (13) of a second conductivity type formed in a selected area of the epitaxial layer (11), at least one terminal region, in particular a source region (29), of the first conductivity type formed in or adjacent to the at least one well region (13), at least one terminal electrode (15), in particular a source electrode (21), formed at least partly on a surface (12) of a first part of the at least one terminal region (14), and at least one resistive region (16) formed within the at least one terminal region (14), the at least one resistive region (16) comprising amphoteric impurities. The present invention further relates to a power electronic switching device comprising a plurality of switching cells and a method for manufacturing a transistor (10), in particular a wide bandgap semiconductor power transistor (40) .

Anmelder

Firmen

Hitachi Energy Ltd
Hitachi Energy Switzerland AG

Land

🇨🇭 Schweiz

Fachgebiete