Lateraler Bipolarer Übergangstransistor mit Gradierter Intrinsischer Silicium-Germanium-Basis

Details

Veröffentlichungs-Nr.

EP4235795

Aktenzeichen

EP22199708

Anmeldetag

5. Oktober 2022

Veröffentlichung

30. August 2023

Rechtsraum

EP

IPC

H01L29/06H01L29/10H01L29/66H01L29/735H01L29/161// H01L29/737

Abstract

A structure for a lateral bipolar junction transistor, the structure comprising: a semiconductor substrate (10); a first terminal (16), for example a collector, including a first raised semiconductor layer (16) on the semiconductor substrate (10); a second terminal (18), for example an emitter, including a second raised semiconductor layer (18) on the semiconductor substrate (10); and an intrinsic base (12, 30, 28) on the semiconductor substrate, the intrinsic base positioned in a lateral direction between the first raised semiconductor layer (16) of the first terminal and the second raised semiconductor layer (18) of the second terminal. The intrinsic base includes a first portion (30) comprising silicon-germanium with a first germanium concentration that is graded in the lateral direction, a second region (12) with a substantially uniform low germanium concentration and a third region (28) with a substantially uniform high germanium content.

Anmelder

Firma

GlobalFoundries U.S. Inc.

Land

🇺🇸 USA

Fachgebiete