Verfahren zum Befestigen eines Anschlusses an einer Metallsubstratstruktur für ein Halbleiterleistungsmodul und Halbleiterleistungsmodul

Details

Veröffentlichungs-Nr.

EP4283662

Aktenzeichen

EP22174896

Anmeldetag

23. Mai 2022

Veröffentlichung

26. März 2025

Erteilung

26. März 2025

Rechtsraum

EP

IPC

H01L21/48H01L23/498H01L23/14H01L23/373

Abstract

A method for attaching a terminal (4) to an insulated metal substrate structure (3) for a semiconductor power module (10) comprises providing at least one terminal (4) and providing the metal substrate structure (3) with a metal top layer (17), a metal bottom layer (19) and an isolating resin layer (18) arranged between the metal top layer (17) and the metal bottom layer (19). The method further comprises providing and coupling a sinter layer (5) to the metal top layer (17) and/or the at least one terminal (4) to form a sintering area for the at least one terminal (4). The method further comprises coupling the at least one terminal (4) to the metal top layer (17) by means of sintering with a sinter tool (6) such that the sinter layer (5) is arranged between the metal top layer (17) and the at least one terminal (4) and connects the at least one terminal (4) to the metal top layer (17).

Anmelder

Firmen

Hitachi Energy Ltd
Hitachi Energy Switzerland AG

Land

🇨🇭 Schweiz

Fachgebiete