Halbleiteranordnung
Anmelder: Infineon Technologies Austria AG 🇦🇹
Details
- Veröffentlichungs-Nr.
- EP4333306
- Aktenzeichen
- EP22193542
- Anmeldetag
- 1. September 2022
- Veröffentlichung
- 11. Februar 2026
- Erteilung
- 11. Februar 2026
- Rechtsraum
- EP
- IPC
- H03K17/687
Abstract
In an embodiment, a semiconductor device 100, 100' comprises a main bi-directional switch 10 formed on a semiconductor substrate 2) and comprising first and second gates, a first source electrically connected to a first voltage terminal VS1, a second source electrically connected to a second voltage terminal VS2, and a common drain D and a substrate control circuit 11. The substrate control circuit (11) comprises a first diode SD1 and a second diode SD2, a discharge circuit 12 comprising a first transistor QC1 and a second transistor QC2 connected in a common source configuration to the semiconductor substrate 20, and a gate potential control circuit 13 comprising a third diode QD1 and a fourth diode QD2. The first diode SD1 has a forward voltage Vf<sub>1</sub> and the third diode QD1 has a forward voltage Vf<sub>3</sub>, wherein Vf<sub>1</sub> ≥ 1.1 Vf<sub>4</sub> or Vf<sub>1</sub> ≥ 1.2Vf<sub>4</sub> or Vf<sub>1</sub> ≥ 1.5Vf<sub>4</sub> or Vf<sub>1</sub> ≥ 2Vf<sub>4</sub>.
Anmelder
- Firma
- Infineon Technologies Austria AG
- Land
- 🇦🇹 Österreich
Österreichische Konzerngesellschaft des deutschen Halbleiterherstellers Infineon mit Sitz in Villach. Entwickelt und fertigt Halbleiterbauelemente für Automobil-, Energie- und Industrieanwendungen.
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JENSEN & SON
JENSEN & SON · London