Verfahren zur Herstellung einer Halbleitervorrichtung

Details

Veröffentlichungs-Nr.

EP4365955

Aktenzeichen

EP22205822

Anmeldetag

7. November 2022

Veröffentlichung

12. März 2025

Erteilung

12. März 2025

Rechtsraum

EP

IPC

H01L29/66H01L21/8234H01L29/417H01L21/768H01L23/528H01L23/535H01L23/485

Abstract

The disclosure relates to a method for forming a semiconductor device, the method comprising: forming a device structure on a substrate, the device structure comprising a fin structure comprising a pair of source/drain bodies and a channel region between the pair of source/drain bodies, the channel region comprising at least one channel layer, and the device structure further comprising a gate structure extending across the channel region of the fin structure; forming a metal layer over the source/drain bodies; etching the metal layer to define respective source/drain contacts on the source/drain bodies; and depositing an interlayer dielectric layer over the gate structure and the source/drain contacts.

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien

Fachgebiete