Verfahren zur Herstellung einer Verbindungsstruktur

Details

Veröffentlichungs-Nr.

EP4372793

Aktenzeichen

EP22208458

Anmeldetag

21. November 2022

Veröffentlichung

4. Juni 2025

Erteilung

4. Juni 2025

Rechtsraum

EP

IPC

H01L21/768H01L23/528

Abstract

The disclosure relates to a method for forming an interconnection structure, comprising:forming a first dielectric layer pattern over a substrate;covering the first dielectric layer pattern with metal and planarizing the metal to expose an upper surface of the first dielectric layer pattern and form a first metal layer pattern;forming a second dielectric layer pattern over the first dielectric layer pattern and the first metal layer pattern;covering the second dielectric layer pattern with metal and planarizing the metal to expose an upper surface of the second dielectric layer pattern and form a second metal layer pattern;forming a mask pattern of a mask material over the second dielectric layer pattern and the second metal layer pattern; andin an etching process comprising using the mask pattern as an etch mask, transferring: a first, second and third sub-pattern of the mask pattern into a first portion of the first metal layer pattern to form a set of lower metal features, a second sub-pattern of the mask pattern into a first portion of the second metal layer pattern and a second portion of the first metal layer pattern to form a set of stacked metal features, and a third sub-pattern of the mask pattern into a second portion of the second metal layer pattern to form a set of upper metal features.

Anmelder

Firma

IMEC VZW

Land

🇧🇪 Belgien

Fachgebiete