Bandabstandsreferenzschaltung unter Niedriger Versorgungsspannung

Details

Veröffentlichungs-Nr.

EP4375788

Aktenzeichen

EP23212179

Anmeldetag

27. November 2023

Veröffentlichung

1. Januar 2025

Rechtsraum

EP

IPC

G05F3/30H03F1/08

Abstract

Proposed is a band gap reference circuit under a low supply voltage capable of generating a band gap reference voltage even under a low supply voltage by using a plurality of bias voltages separately generated and a current source using these bias voltages without using a diode connected structure used in the related art while not being affected by limitations in the operating voltage of a bipolar transistor. The band gap reference circuit under a low supply voltage includes a voltage reference main circuit configured to generate a first node voltage and a second node voltage in response to a first bias voltage and a band gap reference voltage, and a transimpedance amplifier configured to generate the band gap reference voltage by amplifying a difference between the first node voltage and the second node voltage using the first bias voltage, a second bias voltage, and a third bias voltage.

Anmelder

Firma

LX Semicon Co., Ltd.

Land

🇰🇷 Südkorea

Fachgebiete