Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements

Details

Veröffentlichungs-Nr.

EP4394881

Aktenzeichen

EP22217357

Anmeldetag

30. Dezember 2022

Veröffentlichung

30. Juli 2025

Erteilung

30. Juli 2025

Rechtsraum

EP

IPC

H10D12/01H10D12/00H10D62/10H10D62/13// H10D64/23

Abstract

The semiconductor device (100) comprises a semiconductor body (10) with a top side (11) and a bottom side (19). A first main electrode (2) is arranged on the top side and a second main electrode (3) is arranged on the bottom side. The semiconductor device comprises a gate electrode (3) and at least two trenches, namely a first-type trench (51) and a second-type trench (52). The semiconductor body comprises a drift region (14) arranged vertically between the top side and the bottom side and at least two base regions (13a, 13b) each arranged vertically between the drift region and the top side. The semiconductor body further comprises an injection region (12) adjoining the first base region. The first main electrode is in electrical contact with the injection region. The gate electrode extends into the first-type trench. The second-type trench is free of the gate electrode. The second-type trench extends deeper into the semiconductor body than the first-type trench.

Anmelder

Firma

Hitachi Energy Ltd

Land

🇨🇭 Schweiz

Fachgebiete