Halbleiteranordnung

Details

Veröffentlichungs-Nr.

EP4432333

Aktenzeichen

EP23187881

Anmeldetag

26. Juli 2023

Veröffentlichung

27. November 2024

Rechtsraum

EP

IPC

H01L21/50H01L23/24H01L23/31H01L23/00

Abstract

A semiconductor device according to an embodiment includes: an insulating substrate having a first metal layer and a second metal layer; a semiconductor chip on the first metal layer having an upper electrode and a lower electrode connected to the first metal layer; a bonding wire having a first end portion connected to the upper electrode and a second end portion connected to the second metal layer; a first resin layer covering the semiconductor chip and the bonding wire, the first resin layer containing a first resin; a second resin layer covering a bonding portion between the first end portion and the upper electrode containing a second resin having a Young's modulus higher than that of the first resin; a third resin layer on the first resin layer, the third resin layer containing a third resin having a moisture permeability lower than that of the first resin.

Anmelder

Firmen

KABUSHIKI KAISHA TOSHIBA
Toshiba Electronic Devices & Storage Corporation

Land

🇯🇵 Japan

Fachgebiete