Verfahren zur Herstellung von Halbleiterbauelementen, Entsprechendes Substrat und Halbleiterbauelement

EP4451327 Art A1 23. Oktober 2024

Anmelder: STMicroelectronics International N.V. 🇨🇭

Details

Veröffentlichungs-Nr.
EP4451327
Aktenzeichen
EP24170022
Anmeldetag
12. April 2024
Veröffentlichung
23. Oktober 2024
Rechtsraum
EP
IPC
H01L23/495H01L21/48H01L21/56
Offizieller Volltext

Abstract

An electrically conductive substrate (12) for a plurality of semiconductor devices (10) has mutually opposed first (121) and second (122) surfaces and comprises electrically conductive die pads (12A) configured to have semiconductor chips (14) arranged thereon as well as arrays of electrically conductive leads (12B) arranged around the electrically conductive die pads (12A). The substrate (12) comprises elongated electrically conductive connecting bars (100) connected to the electrically conductive die pads (12A). The elongated connecting bars (100) are configured to be cut (B) at intermediate points (SL) along their length to provide singulated substrate portions and have distributed along their length first recesses (121A) at the first surface (121) alternating with second recesses (122A) (121A, 122A) at the second surface (122). Once cut (B) at the intermediate points (SL), the elongated connecting bars (100) are partitioned into bar remainders (100') extending from a distal end (100A) to an electrically conductive die pad (12A) in a singulated substrate portion. The bar remainders (100') have a serpentine pattern with one or more loops between their distal end (100A) exposed at the surface of the insulating encapsulation (20) of the device package and the electrically conductive die pad (12A), thus creating tortuous paths (WPP') countering moisture penetration into the device package. The elongated connecting bars (100) comprise a sequence of adjacent sections having the first recesses (121A) and the second recesses (122A) etched therein, with these adjacent sections alternately located at the opposed first (121) and second (122) surfaces, wherein dummy pads (120A) left exposed by the encapsulation (20) are formed at the second surface (122).

Anmelder

Firma
STMicroelectronics International N.V.
Land
🇨🇭 Schweiz
🇨🇭 STMicroelectronics International

Schweizer Gesellschaft des Halbleiterkonzerns STMicroelectronics, die Chips und Sensoren für Automobiltechnik, Industrie und Unterhaltungselektronik entwickelt.

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