Transistorvorrichtung mit Transistorzellengruppen mit Unterschiedlichen Mittleren Dotierungskonzentrationen im Körperbereich und Unterschiedlichen Quellenbereichsdichten

Details

Veröffentlichungs-Nr.

EP4465347

Aktenzeichen

EP24172623

Anmeldetag

26. April 2024

Veröffentlichung

24. September 2025

Erteilung

24. September 2025

Rechtsraum

EP

IPC

H01L23/00H10D12/00H10D30/66H10D62/10H10D62/13H10D62/17H10D62/60H10D64/00H10D64/23

Abstract

A transistor device includes: a plurality of transistor cells in a semiconductor substrate; and a source pad above the semiconductor substrate and electrically connected to a source region and a body region of the transistor cells. A first group of the transistor cells has a first body region average doping concentration. A second group of the transistor cells has a second body region average doping concentration higher than the first body region average doping concentration. The transistor cells of the first and second groups are interleaved. The transistor cells have a first source region density in a first area of the semiconductor substrate underneath a region of the source pad designated for clip contacting, and a second source region density lower than the first source region density in a second area of the semiconductor substrate outside the first area.

Anmelder

Firma

Infineon Technologies Austria AG

Land

🇦🇹 Österreich

Fachgebiete