Vorspannungsschaltung

Details

Veröffentlichungs-Nr.

EP4465535

Aktenzeichen

EP23305778

Anmeldetag

16. Mai 2023

Veröffentlichung

17. Dezember 2025

Erteilung

17. Dezember 2025

Rechtsraum

EP

IPC

H03F1/22H03F3/19H03F1/30H03F3/21H03F3/50

Abstract

A bias circuit includes a first transistor and a second transistor configured as a first current mirror. A first current source is arranged between a supply node and the first transistor first terminal. A bias circuit output is coupled to the second transistor second terminal. A second current mirror is coupled to the first current mirror and the bias circuit output. A second current source is arranged between the supply node and the second current mirror. A third transistor in a diode-connected configuration is coupled between the first transistor second terminal and a ground. Alternatively or in addition, the bias circuit includes a first variable capacitor coupled between the second transistor first terminal and the second transistor second terminal. A fourth transistor has a control terminal coupled to the supply node, a first terminal coupled to the supply node and a second terminal coupled to the second transistor first terminal.

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande

Fachgebiete