Hydrid-Ionen-Leitende Vorrichtung und Verfahren zur Herstellung einer Hydrid-Ionen-Leitenden Vorrichtung
Anmelder: Kabushiki Kaisha Toshiba 🇯🇵
Details
- Veröffentlichungs-Nr.
- EP4467513
- Aktenzeichen
- EP24162884
- Anmeldetag
- 12. März 2024
- Veröffentlichung
- 21. Mai 2025
- Rechtsraum
- EP
- IPC
- C01B3/00C01B6/02C01B6/04C01B6/24
Abstract
A hydride-ion-conducting device includes a first layer, a first protective layer, a second protective layer and a conductive layer. The first layer includes a hydride-ion-conducting material. The first layer includes a protrusion protruding in an upward direction. The first protective layer is located on the first layer. The first protective layer includes an upper surface extending in a first direction crossing the upward direction. The upper surface of the first protective layer is aligned with an upper end of the protrusion in the first direction. The second protective layer is located on the first layer and on the first protective layer. The conductive layer is located on the second protective layer.
Anmelder
- Firma
- Kabushiki Kaisha Toshiba
- Land
- 🇯🇵 Japan
Japanischer Konzern, der Elektronik, Halbleiter, Energie- und Infrastrukturtechnik sowie Industrieanlagen entwickelt und herstellt.
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Hoffmann Eitle
Hoffmann Eitle · München