Magnetoresistives Element und Magnetschalter mit dem Magnetoresistiven Element

Details

Veröffentlichungs-Nr.

EP4468849

Aktenzeichen

EP23315217

Anmeldetag

24. Mai 2023

Veröffentlichung

27. November 2024

Rechtsraum

EP

IPC

H10N50/10G01R33/09

Abstract

Magnetoresistive element (2) comprising a tunnel barrier layer (22), a ferromagnetic reference layer (21) having a fixed reference magnetization (210), and a ferromagnetic sense layer (23) having a sense magnetization (230) that can be changed by an external magnetic field (B<ext>). The reference, tunnel barrier, and sense layers (21, 22, 23) are stacked perpendicular to a layer plane (P<L>) thereof. At least a portion of the magnetoresistive element (2) comprising the sense layer (23) has a hollow cross-sectional shape (202) in the layer plane (P<L>), the cross-sectional shape (202) having an outer side (204) with an outer lateral size (D<out>) and an inner side (203) defining a width (w<d>) of the cross-sectional shape (202). The outer lateral size (D<out>) is between 1 µm and 5 µm and the width (w<d>) is between 0.2 µm and 0.3 µm. The sense magnetization (230) has a coreless vortex configuration and such that the magnetoresistive element (2) has zero remanence at zero external magnetic field (B<ext>). The present disclosure further concerns a magnetic switch comprising the magnetoresistive element.

Anmelder

Firma

Allegro MicroSystems, LLC

Land

🇺🇸 USA

Fachgebiete