Verstärkervorrichtungen mit mehreren Vorspannungsnetzwerken

Details

Veröffentlichungs-Nr.

EP4510446

Aktenzeichen

EP23306374

Anmeldetag

14. August 2023

Veröffentlichung

18. Februar 2026

Erteilung

18. Februar 2026

Rechtsraum

EP

IPC

H01L23/367H03F1/02H03F3/60H03F3/195H01L23/66H03F3/24H03F3/72H01L23/495H01L23/538H01L23/00

Abstract

An amplifier device includes a first input terminal, a second input terminal, a first transistor having a first control electrode and first and second current-carrying electrodes, wherein the first control electrode is radio frequency (RF) coupled to the first input terminal and DC-coupled to a first bias network electrically coupled to the first control electrode, wherein the first bias network is configured to apply a first direct current (DC) bias to the first control electrode and is RF-isolated from the first control electrode. The amplifier device further includes a second transistor that includes a second control electrode that is RF coupled to the second input terminal and a second bias network electrically coupled to the second transistor, wherein the second bias network is configured to apply a second DC bias to the second transistor and is RF-isolated from the second transistor.

Anmelder

Firma

NXP USA, Inc.

Land

🇺🇸 USA

Fachgebiete