Leistungshalbleitermodul, Anschlussstruktur und Verfahren

Details

Veröffentlichungs-Nr.

EP4517807

Aktenzeichen

EP23194697

Anmeldetag

31. August 2023

Veröffentlichung

22. Oktober 2025

Erteilung

22. Oktober 2025

Rechtsraum

EP

IPC

H01L23/053H01L23/057

Abstract

The invention relates to a power semiconductor module (1) comprisinga module housing (10),a substrate structure (20) with at least one metallization layer (22, 23) and at least one power semiconductor device (24) electrically connected to the at least one metallization layer (22, 23), which substrate structure (20) is attached to the module housing (10) to accommodate the power semiconductor device (24), anda terminal structure (40) electrically connected to the substrate structure (20) and configured for providing an external electrical interface (2, 4) of the power semiconductor module (1) for main power transmission and/or for control signal transmission of the substrate structure (20), whereinthe terminal structure (40) has at least one electrical conductor (42, 44) shaped by a primary forming process.

Anmelder

Firma

Hitachi Energy Ltd

Land

🇨🇭 Schweiz

Fachgebiete