Verwendung von Opfermaterial für die Herstellung eines Vergrabenen Kollektors in einem Vertikalen Bipolartransistor

Details

Veröffentlichungs-Nr.

EP4518611

Aktenzeichen

EP24194378

Anmeldetag

13. August 2024

Veröffentlichung

5. März 2025

Rechtsraum

EP

IPC

H10D10/01H10D10/80H10D62/13

Abstract

A process for making a vertical bipolar transistor (101) that includes removing a sacrificial material (buried oxide 113) from under a base layer (115), preferably an SOI layer, that includes dopants for an intrinsic base of a transistor. After the removal of the sacrificial layer to form a cavity (401) directly under the base layer (115), an epitaxial semiconductor material (601) is formed in the cavity. The semiconductor layer includes dopants for a collector region of the transistor that is located directly under the intrinsic base of the transistor. An epitaxial emitter region (703) is deposited integrally with and together with the collector layer (601) and is isolated electrically from the collector (601) in a subsequent step using CMP.

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande

Fachgebiete