Bipolartransistor und Verfahren zur Herstellung eines Bipolartransistors

Details

Veröffentlichungs-Nr.

EP4525047

Aktenzeichen

EP23197929

Anmeldetag

18. September 2023

Veröffentlichung

18. Februar 2026

Erteilung

18. Februar 2026

Rechtsraum

EP

IPC

H10D10/01H10D10/80H10D62/17

Abstract

A bipolar transistor and a method of making a bipolar transistor. The method includes providing a semiconductor substrate having a major surface, one or more layers located beneath the major surface for forming an intrinsic base, and a collector. The method also includes depositing a first oxide layer on the major surface, depositing a second oxide layer on the first oxide layer, and depositing an extrinsic base layer on the second oxide layer. The method further includes forming an emitter window through the extrinsic base layer. The method also includes removing at least a part of the second oxide layer to form a first cavity and forming an initial part of a base link region in the first cavity. The method also includes removing at least a part of the first oxide layer to form a second cavity and filling the second cavity to form a completed base link region.

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande

Fachgebiete