Halbleiterbauelement mit Mikro-Led-Strukturen

Details

Veröffentlichungs-Nr.

EP4564435

Aktenzeichen

EP23213341

Anmeldetag

30. November 2023

Veröffentlichung

28. Januar 2026

Erteilung

28. Januar 2026

Rechtsraum

EP

IPC

H10H29/14H10H20/01H10H20/815H10H20/817

Abstract

The proposed solution relates to a semiconductor device (30) comprising an epiwafer (10) and wherein a plurality of InGaN platelets (100), each InGaN platelet being monolithically grown on the epiwafer and configured with a top c-plane surface. An upper mask layer (200) is provided with mask apertures (220) over the InGaN platelets, wherein said mask apertures have a width which is smaller than said top c-plane surface. A plurality of microLED structures (240) comprising quantum well, QW, layers (242), are grown on the top c-plane surface in one of said mask apertures. The solution further relates to a microLED device (500) comprising the semiconductor device, and a method for fabricating the semiconductor device.

Anmelder

Firma

Hexagem AB

Land

🇸🇪 Schweden

Fachgebiete