Duale Einachsige Dehnung in Bandförmigen Kanälen

EP4568449 Art A3 6. August 2025

Anmelder: INTEL Corporation 🇺🇸

Details

Veröffentlichungs-Nr.
EP4568449
Aktenzeichen
EP24210233
Anmeldetag
31. Oktober 2024
Veröffentlichung
6. August 2025
Rechtsraum
EP
IPC
H10D84/01H10D84/85H10D30/00H10D30/69H10D64/01
Offizieller Volltext

Abstract

An integrated circuit structure includes laterally adjacent first and second devices. The first device includes (i) a first source or drain region having a first plurality of portions, (ii) a first plurality of bodies, each body of the first plurality of bodies laterally extending from a corresponding one of the first plurality of portions, and (iii) a first source or drain contact including a first conductive material and coupled to the first plurality of portions. The second device includes (i) a second source or drain region having a second plurality of portions, (ii) a second plurality of bodies, each body of the second plurality of bodies laterally extending from a corresponding one of the second plurality of portions, and (iii) a second source or drain contact coupled to the second plurality of portions and including a second conductive material elementally different from the first conductive material.

Anmelder

Firma
INTEL Corporation
Land
🇺🇸 USA
🇺🇸 Intel

US-amerikanischer Halbleiterhersteller mit Sitz in Kalifornien. Entwickelt und produziert Prozessoren, Chipsätze sowie weitere Halbleiterkomponenten für Computer, Server und eingebettete Systeme.

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