Duale Einachsige Dehnung in Bandförmigen Kanälen
Anmelder: INTEL Corporation 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP4568449
- Aktenzeichen
- EP24210233
- Anmeldetag
- 31. Oktober 2024
- Veröffentlichung
- 6. August 2025
- Rechtsraum
- EP
- IPC
- H10D84/01H10D84/85H10D30/00H10D30/69H10D64/01
Abstract
An integrated circuit structure includes laterally adjacent first and second devices. The first device includes (i) a first source or drain region having a first plurality of portions, (ii) a first plurality of bodies, each body of the first plurality of bodies laterally extending from a corresponding one of the first plurality of portions, and (iii) a first source or drain contact including a first conductive material and coupled to the first plurality of portions. The second device includes (i) a second source or drain region having a second plurality of portions, (ii) a second plurality of bodies, each body of the second plurality of bodies laterally extending from a corresponding one of the second plurality of portions, and (iii) a second source or drain contact coupled to the second plurality of portions and including a second conductive material elementally different from the first conductive material.
Anmelder
- Firma
- INTEL Corporation
- Land
- 🇺🇸 USA
US-amerikanischer Halbleiterhersteller mit Sitz in Kalifornien. Entwickelt und produziert Prozessoren, Chipsätze sowie weitere Halbleiterkomponenten für Computer, Server und eingebettete Systeme.
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