Integrierte Schaltungsstruktur mit Rückseitenkontakterweiterung

Details

Veröffentlichungs-Nr.

EP4579740

Aktenzeichen

EP24211087

Anmeldetag

6. November 2024

Veröffentlichung

2. Juli 2025

Rechtsraum

EP

IPC

H01L23/528H01L21/768H10D84/01H10D84/83

Abstract

Integrated circuit structures having backside contact extensions are described. In an example, a structure includes a first and second pluralities of horizontally stacked nanowires or fins. First and second gate stacks are over the first and second pluralities of horizontally stacked nanowires or fins. An epitaxial source or drain structure is between the first and second pluralities of horizontally stacked nanowires or fin. A dielectric structure is over the first gate stack, over the second gate stack, and over the epitaxial source or drain structure, the dielectric structure having an opening over the epitaxial source or drain. A conductive structure is in the opening in the dielectric structure and on the epitaxial source or drain structure, the conductive structure having a top surface below a top of the opening. A conductive extension is on the conductive structure, the conductive extension in and protruding above the opening in the dielectric structure.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA

Fachgebiete