Verfahren zur Initialisierung von Bitleitungen in Phasenwechselspeichern, Entsprechende Vorrichtung und Computerprogrammprodukt

Details

Veröffentlichungs-Nr.

EP4593016

Aktenzeichen

EP25151822

Anmeldetag

14. Januar 2025

Veröffentlichung

30. Juli 2025

Rechtsraum

EP

IPC

G11C13/00G11C7/12

Abstract

A method of performing bit line initializations in a Phase Change Memory, PCM device, the PCM device comprising:a plurality of cells (100) selectable via a plurality of respective bipolar transistors, said plurality of cells (100) being arranged in bit lines and word lines, anda pair of additional control word lines,wherein the method comprises:polarizing the bit lines to a polarization voltage (INT_V), said polarization voltage (INT_V) being higher than a threshold voltage of the plurality of respective transistors;clamping said bit lines at said threshold voltage via said pair of additional control word lines; andpolarizing the word lines to a reading voltage (VBL), said reading voltage (VBL) being higher than the polarization voltage (INT_V).

Anmelder

Firma

STMicroelectronics International N.V.

Land

🇨🇭 Schweiz

Fachgebiete