Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement

Details

Veröffentlichungs-Nr.

EP4611031

Aktenzeichen

EP24160444

Anmeldetag

29. Februar 2024

Veröffentlichung

3. September 2025

Rechtsraum

EP

IPC

H01L21/768H01L21/822H01L21/8238H01L27/06

Abstract

A method (100) for forming a semiconductor device (1), the method comprising:forming a stack of field effect transistors (60), FETs, on top of a substrate (4), the stack of FETs comprising a bottom FET (61) and a top FET (62), the bottom FET (61) comprising at least a first source/drain region (51);forming a first insulating layer (11) laterally surrounding the stack of FETs (60);etching a hole (20) into the first insulating layer (11), the hole (20) extending between a top endpoint (26) and a bottom endpoint (25);filling the hole (20) with electrically conductive material such that the electrically conductive material of the filled hole (20) forms a via (21);etching, from a bottom side (4b) of the substrate (4) towards the first insulating layer (11), a trench (30), such that a top part (30p) of the trench (30) comprises both a bottom side (51b) of the first source/drain region (51) and the bottom endpoint (25);filling the top part (30p) of the trench (30) with electrically conductive material, such that the electrically conductive material of the filled top part (30p) of the trench (30) electrically connects the bottom side (51b) of the first source/drain region (51) to the bottom endpoint (25) of the via (21).

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien

Fachgebiete