Verfahren zur Herstellung eines Kontakts für ein Halbleiterbauelement und Kontakt für ein Halbleiterbauelement

Details

Veröffentlichungs-Nr.

EP4621828

Aktenzeichen

EP24164358

Anmeldetag

19. März 2024

Veröffentlichung

24. September 2025

Rechtsraum

EP

IPC

H01L21/285

Abstract

The present invention provides a method for forming a contact (100) for a semiconductor device, the method comprising: forming a first layer (102) comprising at least one of: a silicon layer doped with phosphorus, Si:P layer; a silicon layer doped with antimony, Si:Sb layer; a silicon layer doped with arsenic, Si:As layer; forming a second layer (104) on top of the first layer (102), the second layer (104) comprising a silicon layer doped with phosphorus, Si:P layer, a phosphorus concentration of the second layer (104) being at least 4%; forming a third layer (106) on top of the second layer (104), the third layer (106) comprising scandium; forming a capping layer (108) above the third layer (106), the capping layer (108) being configured to prevent oxidation of the third layer (106); performing a first anneal. The present invention also provides a contact (100) for a semiconductor device.

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Firmen

Imec VZW
Katholieke Universiteit Leuven KU Leuven Research & Development

Land

🇧🇪 Belgien

Fachgebiete