Verfahren zur Herstellung einer Sic/gate Dielektrischen Zwischenschicht in einer Halbleiteranordnung

Details

Veröffentlichungs-Nr.

EP4632791

Aktenzeichen

EP24169707

Anmeldetag

11. April 2024

Veröffentlichung

15. Oktober 2025

Rechtsraum

EP

IPC

H01L21/02H01L21/04H01L21/28

Abstract

Herein, a method of forming a semiconductor device may comprise forming a semiconductor substrate comprising silicon carbide at a surface thereof, cleaning a surface area of the semiconductor substrate by removing oxide species, carbon clusters, or other contaminants, and forming a dielectric layer above the cleaned surface of the semiconductor substrate. The method further provides a surface passivation at the interface of the cleaned surface of the semiconductor substrate and the dielectric layer.

Anmelder

Firma

Infineon Technologies AG

Land

🇩🇪 Deutschland

Fachgebiete