Integration von Dickem E/a-Oxid für Nanosheet-Gate-All-Around-Vorrichtungen
Anmelder: NXP USA, Inc. 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP4654783
- Aktenzeichen
- EP25177587
- Anmeldetag
- 20. Mai 2025
- Veröffentlichung
- 26. November 2025
- Rechtsraum
- EP
- IPC
- H10D84/01H10D30/01H10D30/00H10D84/83
Abstract
A semiconductor device and fabrication method are described for integrating I/O and core nanosheet transistors in a single nanosheet process flow by processing a stack of alternating first and second semiconductor structures formed on a substrate, where the first semiconductor structures located over a I/O thick oxide transistor region include a planar semiconductor channel layer sandwiched between upper and lower dielectric layers, and where the alternating first and second semiconductor structures are processed to form gate-all-around electrodes in a core transistor stack that are connected over a relatively thinner gate dielectric layer to control one or more first planar semiconductor channel layers in the core transistor stack, and to form gate-all-around electrodes in an I/O transistor stack that are connected over a relatively thicker gate dielectric layer to control one or more second planar semiconductor channel layers in the I/O transistor stack.
Anmelder
- Firma
- NXP USA, Inc.
- Land
- 🇺🇸 USA
US-amerikanische Gesellschaft des Halbleiterkonzerns NXP, die Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation und Industrieelektronik entwickelt.
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