Speichersystem und Betriebsverfahren Dafür, Speichersteuerung und Speichermedium
Anmelder: Yangtze Memory Technologies Co., Ltd. 🇨🇳
Details
- Veröffentlichungs-Nr.
- EP4712080
- Anmeldetag
- 25. Juli 2024
- Veröffentlichung
- 29. Januar 2026
- Rechtsraum
- EP
- IPC
- G11C16/26
Abstract
The examples of the present disclosure discloses a memory system and an operation method thereof, a memory controller and a storage medium, and the memory system comprises a memory device comprising a plurality of word lines, a plurality of storage units coupled to the same word line form at least one physical page; the memory controller is configured to: obtain a first parameter of a first physical page of the plurality of physical pages in a process of performing a read scrub operation, wherein the first parameter is a parameter in a preset model for generating a target reference voltage, and the target reference voltage is used as a read voltage of the physical page when the read operation is performed; the plurality of physical pages comprise a first physical page and a second physical page, the first physical page is a target physical page of the read scrub operation, and the second physical page is another physical page other than the first physical page; generate a first parameter of the second physical page according to the first parameter of the first physical page in combination with a location relationship of the second physical page and the first physical page; and store the first parameter of the first physical page and the first parameter of the second physical page.
Anmelder
- Firma
- Yangtze Memory Technologies Co., Ltd.
- Land
- 🇨🇳 China
Chinesisches Unternehmen aus Wuhan, das NAND-Flash-Speicherchips entwickelt und produziert.
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