Verfahren zur Herstellung eines Lichtemittierenden Elements aus Photonischem Kristallgalliumnitrid und Beleuchtungsvorrichtung

Details

Veröffentlichungs-Nr.

EP4712144

Anmeldetag

10. Mai 2024

Veröffentlichung

21. November 2024

Rechtsraum

EP

Abstract

Provided is a method for obtaining a photonic crystal GaN light-emitting element by efficiently forming a photonic crystal on a GaN layer that constitutes a light-emitting element. This method comprises: a step in which an n-type GaN layer (12), an MQW layer (14), and a p-type GaN layer (16) are epitaxially grown in sequence on a sapphire substrate (10) to form an epitaxial structure; a step in which a p-type electrode, a metal substrate, and a support substrate are formed on the p-type GaN layer (16); a step in which the top and bottom of the epitaxial structure are inverted; a step in which the sapphire substrate (10) is peeled to expose the n-type GaN layer (12) at a surface; a step in which a photonic crystal is formed on the surface of the n-type GaN layer (12) exposed at the surface by electron beam drawing and inductively coupled plasma reactive ion etching; and a step in which an n-electrode (24) is formed.

Anmelder

Firmen

Nitride Semiconductors Co., Ltd.
Nikon Corporation

Land

🇯🇵 Japan